Properties of Si-Doped $a$-Plane GaN Grown with Different SiH4 Flow Rates
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概要
- 論文の詳細を見る
Nonpolar Si-doped $a$-plane GaN layers were grown using metal organic chemical vapor deposition (MOCVD) with different silane (SiH4) flow rates. The on-axis full width at half maximum (FWHM) of X-ray rocking curves (XRCs) along the $c$- and $m$-axis directions showed that Si doping barely affected the anisotropy of $a$-plane GaN. A decrease in the edge threading dislocations (TDs) with increasing Si doping was confirmed by the decreased off-axis FWHM values of the XRCs. With increasing SiH4 flow rate, both the carrier concentration and mobility increased through a reduction in the edge dislocation density. The photoluminescence (PL) spectra revealed that the PL peak positions were first slightly redshifted and then blueshifted with increasing carrier concentration.
- 2011-05-25
著者
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Kim Jong
Korea Advanced Institute Of Science And Technology (kaist)
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Hwang Sung
Korea Univ. Seoul Kor
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Kim Chang
Korea Advanced Institute Of Scierice And Technology
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YOON Dae
School of Advanced Materials Science & Engineering, Sungkyunkwan University
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Yoon Dae
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Song Keun
Korea Advanced Nano Fab Center, Suwon 443-770, Korea
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Kim Hogyoung
College of Humanities and Sciences, Hanbat National University, Daejeon 305-719, Korea
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Hwang Sung
Korea Electronics Technology Institute, Seongnam 463-816, Korea
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