ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE : KOSEC-SPICE

スポンサーリンク

概要

• 論文の詳細を見る

• We would like to present the development of KOSEC-SPICE(Korea Single Electron Circuit simulator for SPICE). The KOSEC-SPICE is a general purpose SPICE for the efficient and accurate simulation of single electron circuits in time domain. A newly developed equivalent circuit approach has been adopted for an efficient build up of the circuit admittance matrix in the SPICE main routine, and the time-dependent master equation solver has been implemented for the exact calculation of the electron population in Coulomb islands. Several simulation examples of single electron circuits and single electron-CMOS hybrid circuits are successfully calculated. The simulation time of KOSEC-SPICE is approximately twice as fast as those of other simulators.

• 社団法人電子情報通信学会の論文
• 2000-06-21

著者

• AHN Doyeol

  Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul

• Ahn D

  Institute Of Quantum Information Processing And Systems University Of Seoul

• Oh J

  Department Of Electronics Engineering Korea University

• Hwang Sungwoo

  Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces

• Hwang Sungwoo

  Department Of Electronics Engineering Korea University

• Hwang Sungwoo

  Department Of Electronics And Computer Engineering Korea University

• Yu YunSeop

  Department of Electronics Engineering, Korea University

• Oh JungHyun

  Department of Electronics Engineering, Korea University

• Ahn Doyeol

  Institute Of Quantum Information & Processing Systems University Of Seoul

• Hwang S.W.

  日本電気(株)基礎研究所

• Hwang S

  Department Of Electronics And Computer Engineering Korea University

• Oh Junghyun

  Department Of Electronics Engineering Korea University

• Yu Yunseop

  Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces

• Oh Jung

  Department Of Computer Science & Engineering At Hanyang University

関連論文

• Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
• Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
• Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
• Electrical Properties of Electron-Beam Exposed Silicon Dioxides and Their Application to Nano-devices
• ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE: KOSEC-SPICE
• ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE : KOSEC-SPICE
• Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
• Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
• Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
• DC Transport Characteristics of Lambda DNA Molecules and Effect of RF Signals
• Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules
• Formation of Electrical Interconnects by Self-Trapping of Deoxyribonucleic Acid Molecules
• Generation of Local Magnetic Field by Nano Electro-Magnets
• Fabrication of single electron transistors with molecular tunnel barriers using AC dielectrophoresis technique
• 1次元細線における単一電子トラップ
• 1次元細線における単一電子トラップ
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• IS-16 The clinical relevance of the Survivin expression and the Loss of Heterozygosity in Neuroblastoma
• A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
• High frequency gate bias response of carbon nanotube field effect transistor
• Relativistic Entanglements of Spin 1/2 Particles with General Momentum(Condensed Matter and Statistical Physics)
• Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
• Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
• Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k・p Theory
• Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
• A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices
• Observation of 77 K Staircase I-V Characteristics in 2DEG's Irradiated by a Focused Ion Beam
• Single Electron Digital Phase Modulator
• Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
• 30-P2-25 The Evaluation of Hepatotoxicity of HMG-CoA Reductase Inhibitor
• Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well
• Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor
• Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
• Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band $\mathbf{k \cdot p}$ Theory
• Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
• Generation of Local Magnetic Field by Nano Electro-Magnets
• Microwave Characterization of a Single Wall Carbon Nanotube Bundle
• Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules
• Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor
• Content-Based Image Retrieval Based on Scale-Space Theory (Special Section of Papers Selected from ITC-CSCC '98)
• Formation of Electrical Interconnects by Self-Trapping of Deoxyribonucleic Acid Molecules

もっと見る 閉じる

スポンサーリンク