A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
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概要
- 論文の詳細を見る
We present a new unified analytical front surface potential model. It is valid in all regions of operation(from the sub-threshold to the strong inversion)and an analytical expression for the critical voltage V_c delineating the partially depleted(PD) and the fully depleted(FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in all regions of operation. The model has been fit to a range of the Si film thickness t_<si> values of SOI device.
- 社団法人電子情報通信学会の論文
- 2001-06-30
著者
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AHN Doyeol
Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul
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Ahn D
Institute Of Quantum Information Processing And Systems University Of Seoul
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Hwang Sungwoo
Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces
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Hwang Sungwoo
Department Of Electronics Engineering Korea University
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Hwang Sungwoo
Department Of Electronics And Computer Engineering Korea University
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Yu YunSeop
Department of Electronics Engineering, Korea University
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Ahn Doyeol
Institute Of Quantum Information & Processing Systems University Of Seoul
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Hwang S.W.
日本電気(株)基礎研究所
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Hwang S
Department Of Electronics And Computer Engineering Korea University
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Yu Yun
Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces
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Yu Yunseop
Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces
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Hwang Sung
Department of Electronics & Computer Engineering, Korea University, Anam, Sungbuk, Seoul 136-701, Korea
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Hwang Sung
Department of Electronic and Computer Engineering, Korea University, Anam, Sungbuk, Seoul 136-075, Korea
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Hwang Sung
Department of Chemistry, Sahmyook University
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