Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor
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概要
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We performed electrical transport measurements on a DNA-conjugated single-wall carbon nanotube (SWCNT) field-effect transistor (FET) at various temperatures ($T$s). At $T = 300$ K, the gate action of the SWCNT FET clearly exhibited n-type behavior, while the bare SWCNT FET showed usual p-type characteristics. The value of the drain current measured from the DNA-conjugated SWCNT FET decreased rapidly with the decrease of $T$. We fit the $T$-dependence of the DNA-conjugated SWCNT FET with a simple back-to-back Schottky diode model and found a slight decrease of $\Phi_{\text{B}}$ with decreasing $T$. A possible explanation for the type conversion is the chemical modification of the CNT surface as a result of the conjugation process.
- 2009-06-25
著者
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Hwang Sung
Research Center For Time Domain Nano-functional Devices Korea University
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Ahn Doyeol
Institute Of Quantum Information & Processing Systems University Of Seoul
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Hwang Jong
Research Center for Time-domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-701, Korea
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Ahn Doyeol
Institute of Quantum Information and Processing Systems and School of Electronics and Computer Engineering, University of Seoul, Jeonnong, Dongdaemoon, Seoul 130-743, Korea
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Kim Duk
Research Center for Time-Domain Nano-Functional Devices and School of Electrical Engineering, Korea University, Anam, Sungbuk, Seoul 136-701, Korea
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Hwang Sung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Hwang Jong
Research Center for Time Domain Nano-functional Devices, Korea University, Seoul 136-701, Korea
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Hwang JongSeung
Research Center for Time-Domain Nano-Functional Devices and School of Electrical Engineering, Korea University, Anam, Sungbuk, Seoul 136-701, Korea
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