Bottom-up synthesis of metal-free elementary semiconductor nanowires(Session 5A : Emerging Device Technology 3)

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概要

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• Bottom-up synthesized nanowires of elementary semiconductor, such as Si and Ge, have been the focus of great scientific interest, due to their potential application in various nanoscale electronic devices. Metal-catalyzed chemical vapor deposition (CVD) methods have proven to be the most successful in producing the semiconductor nanowires and their related heterostructures, However, a metal-free approach for controlled nanowire growth is highly desired since unavoidable metal impurities in metal-catalyzed nanowires are detrimental to commercial device applications. Here we present a novel approach for metal-free synthesis of single-crystal Si and Ge nanowires with controls of diameters, morphology, growth direction and electrical conductivities. This metal-free growth approach offers a clear to the metal contamination problems that affect the reliability of nanowire-based functional devices.

• 社団法人電子情報通信学会の論文
• 2010-06-23

著者

• Whang Dongmok

  School Of Advanced Materials Science & Engineering And Sungkyunkwan Advanced Institute Of Nanote

• Hwang Sung

  Research Center For Time Domain Nano-functional Devices Korea University

• Hwang Sung

  Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea

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