Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells

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概要

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• The exciton binding energies for the zincblende (ZB) GaN/AlGaN quantum well (QW) structure are investigated within the framework of effective mass theory. These results are also compared with those of the wurtzite (WZ) GaN/AlGaN QW structure. The flat-band model reveals that the exciton binding energy of the ZB structure is much smaller than that of the WZ structure. However, with the inclusion of an internal field due to the piezoelectric (PZ) and spontaneous (SP) polarizations, the exciton binding energy of the WZ structure is largely reduced and comparable to that of the ZB structure. The ZB structure reveals that, with decreasing well width, the exciton binding energy decreases because the envelope function spreads into the barrier region. On the other hand, the self-consistent model of the WZ structure reveals that the exciton binding energy largely increases with decreasing well width. In the case of the Al composition dependence, the exciton binding energies for both ZB and WZ structures are shown to be nearly independent of the Al composition. It is found that the exciton binding energy is significantly reduced with increasing sheet carrier density, suggesting that excitons are nearly bleached at densities around $10^{12}$ cm-2.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• Lee Yong-tak

  Department Of Electronic Engineering University Of Tokyo:(present Address) Electronics And Telecommu

• Ahn Doyeol

  Institute Of Quantum Information & Processing Systems University Of Seoul

• Park Seoung-hwan

  Department Of Electronic Engineering Catholic University Of Daegu

• Chuang Shun-lien

  Department Of Electrical And Computer Engineering University Of Illinois At Urbana-champaign

• Park Seoung-Hwan

  Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea

• Lee Yong-Tak

  Department of Information & Communications, KJIST, 1 Oryong-dong Puk-gu, Kwangju, Korea

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