Structural Dependence of Electronic Properties in (1010) Wurtzite GaN/AlGaN Quantum Wells
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概要
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Electronic properties of (1010)-oriented wurtzite (WZ) GaN/AlGaN quantum well (QW) structures are investigated as a function of structural parameters such as Al composition and well width. These results are compared with those of (0001)-oriented WZ GaN/AlGaN QWs with the piezoelectric (PZ) and spontaneous (SP) polarization effects taken into account. In the case of a (0001)-oriented GaN/AlGaN QW, it is observed that the transition energy decreases with the well width and its rate of decrease increases with Al composition. On the other hand, the transition energies for a (1010)-oriented GaN/AlGaN QW are a weak function of the well width and gradually decrease with increasing well width. The valence band structure of the (0001)-oriented QW structure shows that the hole effective mass is nearly independent of the Al composition. In the case of the (1010)-oriented structure, however, it is observed that the hole effective mass of the topmost valence band along k'_y is significantly reduced with increasing Al composition. The optical matrix elements near the band edge (k'_x = k'_y = 0) of the (1010)-oriented GaN/AlGaN QW are more than four times as large as those of the (0001)-oriented GaN/AlGaN QW in the investigated ranges of the Al composition and well width. [DOI: 10.1143/JJAP.41.2084]
- 社団法人応用物理学会の論文
- 2002-04-15
著者
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Park Seoung-hwan
Department Of Physics And Semiconductor Science Catholic University Of Daegu
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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