Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films

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概要

• 論文の詳細を見る

• The effects of oxygen concentration on the electrical and optical properties of In2O3–ZnO films are investigated. In2O3–ZnO films deposited under the pure Ar gas show a resistivity of about $3.8 \times 10^{-4}\,\Omega{\cdot}\text{cm}$, comparable to that of indium-tin-oxide (ITO) films (${\sim}10^{-4}\,\Omega{\cdot}\text{cm}$), and an average transmittance of over 90% in the visible range. Thin films deposited at higher oxygen concentration also show larger absorption at about 400–500 nm compared to those deposited at the oxygen concentration of 0.0%. We propose that it is desirable to use pure Ar gas to obtain films with lower resistivity and higher transmittance in the visible range. Moreover, in the case of films deposited with a higher oxygen concentration, it is found that the resistivity significantly decreases with increasing heat treatment temperature.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-03-15

著者

• Ko Eun-young

  Department Of Physics Catholic University Of Taegu

• Park Seoung-hwan

  Department Of Electronic Engineering Catholic University Of Daegu

• Kim Hwa-min

  Department Of Electronics Engineering Catholic University Of Daegu

• Shon Sang-ho

  Department Of Physics Kyungpook National University

• Rhee Byung-roh

  Department Of Physics Catholic University Of Taegu

• Kim Hwa-Min

  Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea

• Shon Sang-Ho

  Department of Physics, Kyungpook National University, Taegu 702-701, Korea

• Rhee Byung-Roh

  Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea

• Ko Eun-Young

  Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea

• Kim Hwa-Min

  Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea

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