Effects of Oxygen Concentration on Characteristics of RF-Sputtered In_2O_3-ZnO Thin Films
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概要
- 論文の詳細を見る
- 2001-03-01
著者
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Ko Eun-young
Department Of Physics Catholic University Of Taegu
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PARK Seoung-Hwan
Department of Physics, Catholic University of Taegu
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KIM Hwa-Min
Department of Physics, Catholic University of Taegu
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RHEE Byung-Roh
Department of Physics, Catholic University of Taegu
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SHON Sang-Ho
Department of Physics, Kyungpook National University
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Kim H‐m
Catholic Univ. Daegu Kyeongbuk Kor
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Park Seoung-hwan
Department Of Physics Catholic University Of Taegu
関連論文
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In_2O_3-ZnO Thin Films
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- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
- Electrical and Optical Properties of In_2O_3-ZnO Films Deposited on Polyethylene Terephthalate Substrates by Radio Frequency Magnetron Sputtering
- Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
- Depolarization Current by a Dipolar Defect in Semi-Insulating GaAs
- High Temperature Characteristics of Strained InGaAs/InGaAlAs Quantum Well Lasers
- Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
- Reversible Electrical and Optical Behaviors due to Excess Oxygen in RF-Sputtered In_2O_3-ZnO Films
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films