Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
スポンサーリンク
概要
- 論文の詳細を見る
Optical properties of staggered InGaN/InGaN/GaN quantum-well (QW) light-emitting diodes with Ga- and N-faces were investigated using the multiband effective mass theory. The staggered QW structure shows that the carrier density dependence of the transition wavelength is largely reduced compared to the conventional QW structure. On the other hand, the heavy-hole effective mass around the topmost valence band is almost unaffected by the polarity. The N-face staggered InGaN/InGaN/GaN QW structure has a greater spontaneous emission peak than the Ga-face staggered InGaN/InGaN/GaN QW structure because the former has a larger matrix element than the latter. We expect the N-face staggered InGaN/InGaN/GaN QW structure to have improved characteristics compared with the Ga-face staggered InGaN/InGaN/GaN QW structure.
- 2011-07-25
著者
-
Lee Yong-tak
Department Of Electronic Engineering University Of Tokyo:(present Address) Electronics And Telecommu
-
Ahn Doyeol
Department Of Electrical Engineering Seoul City Univeristy
-
Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
-
Park Jongwoon
Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology, Gwangju 500-480, Republic of Korea
-
Lee Yong-Tak
Department of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
-
Ahn Doyeol
Department of Electrical and Computer Engineering, University of Seoul, Seoul 130-743, Korea
関連論文
- Optical Gain Calculation for Strained Quantum Well Lasers by the Fourier Expansion Method
- Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
- Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
- Fiber-Optic Separation and Compression of Gain-Switched Multimode Semiconductor Laser Pulses
- High Temperature Characteristics of Strained InGaAs/InGaAlAs Quantum Well Lasers
- Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
- Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
- Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density
- Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots
- Barrier-Width Effects on Electronic Properties of GaAsSb/GaAs Quantum Well Structures
- Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
- On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
- Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization
- Intraband Relaxation Time in Wurtzite GaN/InAlN Quantum-Well
- Structural Dependence of Electronic Properties in (1010) Wurtzite GaN/AlGaN Quantum Wells
- Intraband Relaxation Time in Wurtzite GaN/AlGaN Quantum-Well Structures with Spontaneous Polarization Effects
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films
- Piezoelectric and Spontaneous Polarization Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well with Arbitrary Crystal Orientation
- Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
- Optical Properties of Strained CdTe/ZnTe Pyramidal Quantum Dots
- Crystal Orientation Effects on Many-Body Optical Gain of Wurtzite InGaN/GaN Quantum Well Lasers
- Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band $\mathbf{k \cdot p}$ Theory
- Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
- Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors
- Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings
- Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings