Kim Hwa-min | Department Of Electronics Engineering Catholic University Of Daegu
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概要
関連著者
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Kim Hwa-min
Department Of Electronics Engineering Catholic University Of Daegu
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Kim Hwa-Min
Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea
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KIM Hwa-Min
Department of Physics, Catholic University of Taegu
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Park Seoung-hwan
Department Of Electronic Engineering Catholic University Of Daegu
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Je Koo-chul
The School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Ahn Doyeol
Institute Of Quantum Information & Processing Systems University Of Seoul
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Ahn Jeung-sun
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Kang Young-jin
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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KIM Hae
School of Computer and Information Communication Engineering, Catholic University of Daegu
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AHN Doyeol
Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul
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Kim Jung-jin
Research Center For Interdisciplinary Research Tohoku University
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Kim J‐j
Department Of Physics Catholic University Of Taegu-hyosung
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Ko Eun-young
Department Of Physics Catholic University Of Taegu
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PARK Seoung-Hwan
Department of Physics, Catholic University of Taegu
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AHN Jeung-Sun
The School of Materials Science, Japan Advanced Institute of Science and Technology
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JE Koo-Chul
The School of Materials Science, Japan Advanced Institute of Science and Technology
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Jung Sang-kuan
Department Of Physics And Semiconductor Science Catholic University Of Daegu
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Kim Jong-jae
Department Of Physics Catholic University Of Taegu-hyosung:department Of Physics Faculty Of Science
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Shon Sang-ho
Department Of Physics Kyungpook National University
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Bae Kang
Department Of Transport Vehicle Engineering Gyeongsang National University
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Ahn J‐s
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Ahn Jeung
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Kim Hwa-min
Department Of Physics And Semiconductor Science Catholic University Of Daegu
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Kim Hwa-min
Department Of Physics Catholic University Of Taegu-hyosung
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Im Hee-joong
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Kim Dong-hwan
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Rhee Byung-roh
Department Of Physics Catholic University Of Taegu
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Mitani T.
The School Of Materials Science Japan Advanced Institute Of Science And Technology
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Kim Jong-jae
Department Of Physics Catholic University Of Taegu-hyosung
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Park Seoung-Hwan
Department of Photonics and Information Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Park Seoung-Hwan
Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Ahn Jeung
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Ahn Doyeol
Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul 130-743, Korea
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Kim Hwa-Min
Department of Photonics and Information Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Kim Hwa-Min
Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea
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Kim Hwa-Min
Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea
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Shon Sang-Ho
Department of Physics, Kyungpook National University, Taegu 702-701, Korea
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Rhee Byung-Roh
Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea
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Kang Young-Jin
The School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai 1-1, Tatsunokuchi, Ishikawa 923-1292, Japan
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Kang Young-Jin
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Sohn Sunyoung
Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea
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Je Koo-Chul
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Je Koo-Chul
The School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai 1-1, Tatsunokuchi, Ishikawa 923-1292, Japan
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Ahn Jeung-Sun
The School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai 1-1, Tatsunokuchi, Ishikawa 923-1292, Japan
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Kim Dong-Hwan
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Jung Sang-Kuan
Department of Physics and Semiconductor Science, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Korea
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Ko Eun-Young
Department of Physics, Catholic University of Taegu, Hayang, Kyeongbuk, Korea
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Kim Hae
School of Computer and Information Communication Enginnering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, Korea
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Im Hee-Joong
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
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Mitani T.
The School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa 923-1292, Japan
著作論文
- Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
- Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers
- Depolarization Current by a Dipolar Defect in Semi-Insulating GaAs
- Reversible Electrical and Optical Behaviors due to Excess Oxygen in RF-Sputtered In_2O_3-ZnO Films
- Electronic and Optical Properties of Indium Zinc Oxide Thin Films Prepared by Using Nanopowder Target
- Electronic and Optical Properties of 1.55 μm GaInNAs/GaAs Quantum-Well Structures
- Theoretical Comparison of Electronic and Lattice Thermal Conductivities in n-type (Bi1-xSbx)2Te3 Solid Solutions
- Electrical and Optical Properties of In2O3–ZnO Films Deposited on Polyethylene Terephthalate Substrates by Radio Frequency Magnetron Sputtering
- Effects of Oxygen Concentration on Characteristics of RF-Sputtered In2O3–ZnO Thin Films
- Optical Gain in GaN Quantum Well Lasers with Quaternary AlInGaN Barriers