Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors

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概要

• 論文の詳細を見る

• We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show a hole conduction behavior, and the gate sensitivity of 0.0034µA/V, which is reasonable with the size of the strip (5×10µm2). After the adsorption of 30 base pairs single-stranded poly (dT) DNA molecules, the conductance and gate operation of the graphene FET exhibit almost 11% and 18% decrease from those of the bare graphene FET device. The observed change may suggest a large sensitivity for a small enough (nm size) graphene strip with larger semiconducting property.

• （社）電子情報通信学会の論文
• 2011-05-01

著者

• HWANG Jongseung

  Research Center for Time-Domain Nano-Functional Devices, Korea University

• KIM Heetae

  Research Center for Time-Domain Nano-Functional Devices, Korea University

• LEE Jaehyun

  Research Center for Time-Domain Nano-Functional Devices, Korea University

• Whang Dongmok

  Research Center For Time-domain Nano-functional Devices Korea University:skk Advanced Institute Of N

• Hwang Jongseung

  Research Center For Time-domain Nano-functional Devices Korea University:school Of Electrical Engine

• Kim Heetae

  Research Center For Time-domain Nano-functional Devices Korea University:school Of Electrical Engine

• Lee Jaehyun

  Research Center For Time-domain Nano-functional Devices Korea University:skk Advanced Institute Of N

• Hwang Sungwoo

  Research Center For Time-domain Nano-functional Devices Korea University:school Of Electrical Engine

• Whang Dongmok

  Research Center For Time-domain Nano-functional Devices

• Hwang Sungwoo

  Research Center For Time-domain Nano-functional Devices Korea University

• Hwang Jongseung

  Research Center For Time-domain Nano-functional Devices Korea University

• Lee Jaehyun

  Research Center For Time-domain Nano-functional Devices Korea University

• Kim Heetae

  Research Center For Time-domain Nano-functional Devices Korea University

• Whang Dongmok

  Research Center for Time Domain Nano-functional Devices, Korea University, Seoul 136-701, Korea

• Hwang JongSeung

  Research Center for Time-Domain Nano-Functional Devices and School of Electrical Engineering, Korea University, Anam, Sungbuk, Seoul 136-701, Korea

関連論文

• Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors(Session 2B : Graphene and III-Vs)
• Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors(Session 2B : Graphene and III-Vs)
• Synthesis of Small Diameter Silicon Nanowires on SiO_2 and Si_3N_4 Surfaces
• Aluminum Nanotransmission Lines with No Grain Boundaries and No Surface Roughness
• Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors
• Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor
• Microwave Characterization of a Single Wall Carbon Nanotube Bundle
• Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors

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