Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k・p Theory
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
-
AHN Doyeol
Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul
-
Lee Yong-tak
Department Of Information And Communications Kwangju Institute Of Science And Technology
-
CHUANG Shun-Lien
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
-
Park Seoung-hwan
Catholic University Of Daegu Department Of Physics And Semiconductor Science
関連論文
- Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
- ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE: KOSEC-SPICE
- ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE : KOSEC-SPICE
- Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
- Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
- Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
- DC Transport Characteristics of Lambda DNA Molecules and Effect of RF Signals
- Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules
- Formation of Electrical Interconnects by Self-Trapping of Deoxyribonucleic Acid Molecules
- Generation of Local Magnetic Field by Nano Electro-Magnets
- Fabrication of single electron transistors with molecular tunnel barriers using AC dielectrophoresis technique
- A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
- Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3μm InGaAlAs/InP Quantum Well Lasers
- High frequency gate bias response of carbon nanotube field effect transistor
- Relativistic Entanglements of Spin 1/2 Particles with General Momentum(Condensed Matter and Statistical Physics)
- Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
- Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
- Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k・p Theory
- Fiber-Optic Separation and Compression of Gain-Switched Multimode Semiconductor Laser Pulses
- Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
- A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices
- Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band $\mathbf{k \cdot p}$ Theory