プラズマCVD法によるTiN膜の合成
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概要
- 論文の詳細を見る
TiN films have been successfully prepared by plasma CVD using TiI<SUB>4</SUB>, NH<SUB>3</SUB> and H<SUB>2</SUB> reaction gases. (111) oriented films with smooth and fine-grained surfaces were obtained at the substrate temperature between 450 and 750°C. On the other hand, non-oriented films with rugged surfaces were obtained at the substrate temperature of 850°C. The deposition rates of these films were 2730 nm/min. The lattice constants of these films decreased from 4.243 to 4.238Å with increasing the flow rate of N<SUB>2</SUB> gas. Micro vickers hardness of the films was confirmed to be 1819 GPa under the optimum experimental conditions in the present study.
- 日本真空協会の論文
著者
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鎌田 喜一郎
長岡技術科学大学化学系
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Tanaka O
Institute Of Pharmaceutical Sciences Hiroshima University School Of Medicine
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臼井 可隆
電気興業株式会社
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山本 勉
電気興業株式会社
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鎌田 喜一郎
長岡技術科大学工学部
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