プラズマCVD法によるSiN_xC_y膜の熱的安定性

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The thermal stability of amorphous SiN_xC_y films prepared by ;he plasma CVD method was described. The compositions of the films prepared were SiN_<1.34>(〜Si_3N_4), SiN_<0.75>C_<0.43>(SiNC) and SiC_<0.92>(〜SiC). The films were analyzed by infrared absorption spectroscopy (IR), thermal analysis (DTA/TG), X-ray diffraction, TEM, SEM and Auger electron spectroscopy to investigate the effect of annealing on the structure, bonding, crystallization temperature and crystalline phases. Hydrogen in films was desorbed on annealing from room temperature to 1173 K. The loss of hydrogen, which was affected by the ambient atmosphere, was larger in vacuum than in N_2. The crystallization temperatures of Si_3N_4, SiNC and SiC films were above 1673 K, 1673 K and 1373 K when annealed in N_2, and above 1373 K, 1573 K and 1273 K when annealed in vacuum, respectively. The crystalline phases formed during annealing in vacuum were α, β-Si_3N_4 for Si_3N_4 films, α, β-Si_3N_4 and α, β-SiC for SiNC films, and β-SiC (α-SiC above 1673 K) for SiC films. It was revealed that the SiNC film, a mixed composition of Si_3N_4 and SiC, had the highest crystallization temperature and thermal stability among them in spite of the absence of stable phases between Si_3N_4 and SiC. As for the thermal stability in morphological change (the occurrence of peelings and cracks on annealing) for Si_3N_4, SiNC and SiC films on the several kinds of substrates (stainless steel, carbon steel, Si, Si_3N_4, Al_2O_3), the Si_3N_4 film on stainless steel was superior to the other films on each substrate.
社団法人日本セラミックス協会の論文
1993-07-01

プラズマCVD法によるSiN_xC_y膜の熱的安定性

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