高周波プラズマCVD法による炭素膜へのバイアス効果
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概要
- 論文の詳細を見る
This paper is concerned with the bias effect of additional DC voltage, which is applied between the reaction chamber and the substrate, on the properties of carbon films prepared by RF-plasma CVD. Hard carbon films (H_v≦2500) of 50-100 nm thick were synthesized by the plasma CVD method with negative DC voltage to the substrate. The deposition rate, refractive index and microhardness of the films increased with increasing negative voltage at -140 V or above. Their Raman spectra showed two broad peaks at 1350 cm^<-1> and 1550-1580 cm^<-1>. These facts suggested that the additional negative bias promoted the formation of i-carbon and/or diamond like structures in the films.
- 社団法人日本セラミックス協会の論文
- 1990-06-01
著者
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鎌田 喜一郎
長岡技術科学大学工学部
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Tanaka O
Institute Of Pharmaceutical Sciences Faculty Of Medicine Hiroshima University
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鎌田 喜一郎
長岡技術科学大学化学系
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丸山 一典
長岡技術科学大学化学系
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中山 正俊
TDK(株)開発研究所基礎研究部
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上田 国博
TDK(株)開発研究所基礎研究部
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柴原 正典
TDK(株)開発研究所基礎研究部
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柴原 正典
Tdk(株)開発研究所
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Tanaka O
Institute Of Pharmaceutical Sciences Hiroshima University School Of Medicine
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鎌田 喜一郎
長岡技術科大学工学部
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