レーザーCVDによるTiO_2膜の合成
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概要
- 論文の詳細を見る
TiO_2 films were obtained from Ti (OC_3H_7)_4 vapor with a high growth rate of ca. 40 nm s^<-1> by laser assisted CVD. In particular, laser beam increased the growth rate at 400℃ more than 2.5 times. These increases in the growth rate might be attributable to the promotion of a homogeneous nucleation by laser beam in the gas phase above the substrate. Anatase films emerged at 500℃ or above without the assistance of laser beam instead of amorphous films at lower temperatures. On the other hand, anatase films emerged even at 400℃ or above with the assistance of laser beam. The activation energy for TiO_2 film formation by this work was 17 kJ mol^<-1> similar to that by the traditional CVD.
- 社団法人日本セラミックス協会の論文
- 1989-12-01
著者
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深沢 博之
長岡技術科学大学
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田辺 伊佐雄
長岡技科大
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田辺 伊佐雄
長岡技術科学大学
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Tanaka O
Institute Of Pharmaceutical Sciences Faculty Of Medicine Hiroshima University
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鎌田 喜一郎
長岡技術科学大学化学系
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丸山 一典
長岡技術科学大学化学系
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天野 成基
長岡技術科学大学
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田辺 伊佐雄
長岡技術科学大学化学系
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Tanaka O
Institute Of Pharmaceutical Sciences Hiroshima University School Of Medicine
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鎌田 喜一郎
長岡技術科大学工学部
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