EMIノイズとスイッチング損失を考慮したIGBTの限界設計(パワーエレクトロニクス及び半導体電力変換一般)

概要

論文の詳細を見る
Critical N-base design in IGBT is discussed with Electro-Magnetic Interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT considering the turn-off loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base.
社団法人電子情報通信学会の論文
2008-10-16