ダブルインプラ・マルチエピSJ-MOSFETのオン抵抗のnピラープロファイル依存性(パワーエレクトロニクス及び半導体電力変換一般)

概要

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We investigated the profile dependency of specific on-resistance (R_<on>A) under high- temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the R_<on>A characteristics because the profile affects the electron mobility (μ_e) in the drift region. The n-column profile was modulated by the column diffusion time (normalized t_<diff>=1.0, 1.4, 2.1) in this experiment. The optimal diffusion time (normalized t_<diff>=1.4) achieved not only suppressing the increase of R_<on>A under the high-temperature and high-current-density conditions but also enough avalanche capability.
社団法人電子情報通信学会の論文
2008-10-16