マイクロ温度センサを用いたIn-Situウェハ温度計測制御 : 第1報,ラージモデルを用いた実験的検討(機械力学,計測,自動制御)

概要

論文の詳細を見る
For photolithography in semiconductor manufacturing, the precise temperature control of a wafer has been demanded to realize a more fine device and high yield in recent years. However, it is difficult to achieve the precise temperature control by current hot and cooling plates, because those plates cannot measure wafer temperature during actual processing, which will cause thermal budget error because of the warp of each wafer and the temperature change of those chambers. For that reason, we propose an in-situ measurement and control method of wafer temperature based on micro area contact to a processing wafer using some micro sensors. The micro sensor consists of the resistance temperature detector (RTD) of a platinum membrane type, a thermal insulation substrate with air cavity, and a micro-bellows. In this paper, the large model of the micro sensor was prototyped for an experimental study. Experimental results illustrate the effectiveness of the proposed method, in-situ measurement accuracy 0.1 degrees centigrade, and 25% reduction of settling time by in-situ feedback control.
2008-07-25