High Temperature Reactions of Ti with SiC(Materials, Metallurgy & Weldability)
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概要
- 論文の詳細を見る
Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373K to 1773K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673K using Ti foil with a thickness of 50μm. At a bonding time of 0.3ks, TiC at the Ti side and a mixture of Ti_5Si_3C_x and TiC at the SiC side were formed, yielding the structure sequence of β-Ti/TiC/Ti_5Si_3C_x+TiC/SiC. Furthermore, at the bonding time of 0.9ks, a Ti_5Si_3C_x layer phase appeared between SiC and the mixture of Ti_5Si_3C_x and TiC. Upon the formation of Ti_3SiC_2 (T phase) after the bonding time of 3.6ks, the complete diffusion path was observed as follows: β-Ti/TiC/Ti_5Si_3C_x+TiC/Ti_5Si_3C_x/Ti_3SiC_2/SiC. The activation energies for growth of TiC, Ti_5Si_3C_x and Ti_3SiC_2 were 194, 242 and 358kJ/mol, respectively.
- 大阪大学の論文
著者
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NAKA Masaaki
Osaka University
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Schuster Julius
Institute Of Physical Chemistry University Of Vienna
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Naka M
Osaka University
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Schuster J
Univ. Vienna Aut
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FENG Jicai
Osaka University
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