Reaction and Structure at the Solid State Diffusion Bonded Ti/Si_3N_4 Interface(Materials, Metallurgy & Weldability)
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In order to clarify the interfacial structure and reaction mechanism at the interface of titanium and silicon nitride during solid state diffusion bonding, electron probe microanalysis, X-ray diffraction and transmission electron microscopy were carried out. At temperatures above 1373K, one reaction layer consisting of TiN and Ti_5Si_3N_x is formed at the joining interface. Three zones are observed in the reaction layer. First is the TiN zone adjacent to Si_3N_4. Second is the Ti_5Si_3N_x zone adjacent to titanium. Third is the TiN+Ti_5Si_3N_x mixed phase zone between TiN and Ti_5Si_3N_x zone. As a result, the diffusion path for this system is described as Ti/Ti_5Si_3N_x/Ti_5Si_3N_x+TiN/TiN/Si_3N_4. The growth behavior of the reaction layer was also analyzed. The initial growth rate constant and the activation energy for growth of the reaction layer are estimated as 4.9×10^<-7>m^2s^<-1> and 223 kJmol^<-1>K^<-1>, respectively.
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