Photoluminescence from Thermally Oxidized Hydrogenated Amorphous Silicon Nanoball Films Fabricated by Double-Tubed-Coaxial-Line-Type Microwave Plasma Chemical Vapor Deposition System : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
Using a double-tubed-coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. A high deposition rate of 1600Å/s is achieved at a gas flow rate of 30ml/min. Photoluminescence (PL) around 780 nm is observed at roomtemperature after the a-Si:H nanoball film is thermally oxidized in air or in pure oxygengas. We have fabricated thermally oxidized a-Si:H nanoball films under various fabrication and oxidation conditions. As the substrate temperature during deposition becomes higher, the PL intensity decreases, and PL cannot be observed above 200℃. The PL intensity is the strongest when the substrate is set about 6 cm from the discharge tube end. As the discharge time increases, the film thickness increases and saturates, and consequently the PL intensity increases and also saturates.
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Kato Isamu
Department Of Electronics Information And Communication Engineering Waseda University:materials Rese
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Agnihotri O.
Semiconductor Engineering Laboratory Departlnent Of Physics Indian Institute Of Technology
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Matsumoto Takayuki
Department Of Electronics Information And Communication Engineering Waseda University
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Agnihotri O.P.
Semiconductor Engineering Laboratory, Departlnent of Physics, Indian Institute of Technology
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