Dependence of Photoluminescence Characteristics of Thermally Oxidized Hydrogenated Amorphous Silicon Nanoball Films on Ion Bombardment Energy
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概要
- 論文の詳細を見る
Using a double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system, hydrogenated amorphous silicon (a-Si:H) nanoball films, which include Si nanocrystals, can be fabricated. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball film is oxidized by heating in air or pure oxygen gas. We fabricate a- Si:H nanoball films with various the DC bias voltages applied to the substrate of this system and discuss the influence of the ion bombardment energy on the film properties and the PL characteristics. From the calculations it is clear that the number of Si nanociystals existing per unit area of the a-Si:H nanoball film is almost proportional to the PL intensity. We propose the creation mechanism of Si nanocrystals and calculate the number of Si nanocrystals. From the calculation result it is clear that one a-Si:H nanoball contains 4 to 12 Si nanocrystals.
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Kato I
Waseda Univ. Tokyo Jpn
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MATSUMOTO Takayuki
Materials Research Laboratory for Bioscience and Photonics, Waseda University
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Matsumoto Takayuki
Materials Research Laboratory For Bioscience And Photonics Waseda University
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- Dependence of Photoluminescence Characteristics of Thermally Oxidized Hydrogenated Amorphous Silicon Nanoball Films on Ion Bombardment Energy
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