Optical Energy Gap Measuremerut of Plasma Chemical Vapor Deposition Very Thin Films Using Evanescent Wave
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概要
- 論文の詳細を見る
We propose the use of an evanescent field of waveguided light transmitted along a portion of an optical fiber with the cladding removed (a cladless optical fiber) to obtain the optical energy gap (E_o) of a semiconductor. Through our study of this new method of measurement, it is clarified that E_o of hydrogenated amorphous silicon (a-Si:H) semiconductor can be determined using a longer fabricated film which is thinner than ordinarily used. While ordinary methods of measurement require a film thickness on the order of 1 μm, this new method of measurement requires a film thickness on the order of 4 nm, with the cladless part of 50 mm in length.
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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Takezawa Naganori
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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