Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma
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概要
- 論文の詳細を見る
This study has been concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 Å/min. The structure of the fabricated films is amorphous and the optical band gap is 1.8 to 2.0 eV.
- 社団法人応用物理学会の論文
- 1983-01-20
著者
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Hara Shinji
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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WAKANA Shin-ichi
Department of Electronics and Communication Engineering, School of Science and Engineering, Waseda U
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Wakana Shin-ichi
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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