Method of Probe Measurement in N_2/SiH_4 Microwave Plasma
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概要
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It has been clarified that probe current decreases linearly with increasing deposition time of a SiN film on a probe. From this result, a probe current-voltage characteristic without any deposition of the SiN film can be extrapolated from some probe current-voltage characteristics of different deposition times of the SiN film. It has been clarified that the 450 A SiN film deposited on the probe can be removed by ion bombardment with - 200 V applied to the probe for 220 s in the pure N_2 plasma (T_e≒13,000 K, n_e≒5.0×10^9 cm^<-3>). By repeating these two methods, it is clear that repeated ordinary probe measurement is possible in the N_2/SiH_4 plasma. By using this method, the spatial distributions of electron temperature and electron density are measured in the N_2/SiH_4 plasma in the deposition chamber of a double-tubed coaxial-line type microwave plasma chemical vapor deposition (MPCVD) system.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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KATO Isamu
Department of Electronics, Information and Communication Engineering, Waseda University
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Kato Isamu
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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Sakamoto Tadashi
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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SHIMODA Tsuyoshi
Department of Electronics and Communication, School of Science and Engineering, Waseda University
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Shimoda Tsuyoshi
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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