Deposition of Hydrogenated Amorphous Silicon Films Using a Microwave Plasma Chemical Vapor Deposition Method with DC Bias
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概要
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A DC bias is applied to a substrate placed in spatial afterglow plasma created by the double-tubed coaxial line-type microwave plasma chemical vapor deposition system. This DC bias method enables us to control only the ion bombardment energy without changing the ion flux density and the radical density. Hydrogenated amorphous silicon films were deposited, varying only the ion bombardment energy. With increasing ion bombardment energy, the dihydride bonds Si-H_2 and the polyhydride bonds (Si-H_2)n decrease, and the monohydride bonds Si-H and the film density increase.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Kato Kiyotaka
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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