Removal Conditions of Films Deposited on Probe Surface
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概要
- 論文の詳細を見る
Silicon nitride films deposited on a cylindrical probe surface are removed by ion bombardment in pure N_2 plasma in the chamber of the double-tubed coaxial-line-type microwave plasma chemical vapor deposition system, and removal rates of the films are measured. The experiments are carried out with variation of the probe position in the chamber and the bombardment voltage applied to the probe. It has been clarified that the removal rate is proportional to the ion flux density. From this result, general removal conditions of silicon nitride films by ion bombardment have been clarified.
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
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Kato I
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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Yamagishi Toshihiro
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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Yamagishi Toshihiro
Deparatment Of Animal Science Faculty Of Agriculture Tohoku University
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Shimoda Tsuyoshi
Department Of Electronics And Communication School Of Science And Engineering Waseda University
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