Oxidation Properties of Silicon Nitride Thin Films Fabricated by Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition : Surfaces, Interfaces and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
-
KATO Isamu
Department of Electronics, Information and Communication Engineering, Waseda University
-
Kato Isamu
Department Of Electronics And Communication Engineering School Of Science And Engineering Waseda Uni
-
Kiyota Yukihiro
Department Of Electronics And Communication School Of Science And Engineering Waseda University
-
NUMADA Kouji
Department of Electronics and Communication, School of Science and Engineering, Waseda University
-
Numada Kouji
Department Of Electronics And Communication School Of Science And Engineering Waseda University
関連論文
- Effect of Ar^+ Ion Bombardment During Hydrogenated Amorphous Silicon Film Growth in Plasma Chemical Vapor Deposition System
- Refractive Index Measurement of Silicon Thin Films Using Stab Optical Waveguides
- Optical Energy Gap Measurement of Semiconductor Ultrathin Films Using Optical Waveguides
- Oxidation Properties of Silicon Nitride Thin Films Fabricated by Double Tubed Coaxial Line Type Microwave Plasma Chemical Vapor Deposition : Surfaces, Interfaces and Films
- Microwave Plasma CVD System for the Fabrication of Thin Solid Films
- Method of Probe Measurement in N_2/SiH_4 Microwave Plasma
- Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma
- Deposition of Hydrogenated Amorphous Silicon Films Using a Microwave Plasma Chemical Vapor Deposition Method with DC Bias
- Fabrication of a-Si:H Thin Films Using a Microwave Discharge Under a Magnetic Field of Electron Cyclotron Resonance
- Removal Conditions of Films Deposited on Probe Surface
- Optical Energy Gap Measuremerut of Plasma Chemical Vapor Deposition Very Thin Films Using Evanescent Wave
- Dependence of Photoluminescence Characteristics of Thermally Oxidized Hydrogenated Amorphous Silicon Nanoball Films on Ion Bombardment Energy
- Photoluminescence from Thermally Oxidized Hydrogenated Amorphous Silicon Nanoball Films Fabricated by Double-Tubed-Coaxial-Line-Type Microwave Plasma Chemical Vapor Deposition System : Optics and Quantum Electronics
- Effect of HF Treatment on Photoluminescence Characteristics of a-Si:H Nanoball Films
- Refractive Index Measurement of Silicon Thin Films Using Slab Optical Waveguides