Preparation of Metallic W Film by H_2-Reduction of WO_3 Electron-Resist Film
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概要
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A metallic W film was prepared from a WO_3 electron-resist film by H_2-reduction above 600℃, and the characteristics of the reduced W film have been investigated. It was found that the electric resistivity of the film decreases and the size of the constituent grains increases with increasing reduction temperature, while the film thickness decreases down to about 40% of the initial thickness above 600℃. The reduced W film had a discontinuous structure with many cracks and had random crystal orientation of the grains. A fine pattern of metallic W with high contrast and no crack was fabricated by the H_2-reduction of a fine pattern of the WO_3 electron resist.
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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Baba Mamoru
Department Of Electronic Engineering Faculty Of Engineering Iwate University
-
Baba Mamoru
Department Of Electrical And Electronic Engineering Iwate University
-
Ohta Kiyoshi
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Electronic Engineering Faculty Of Engineering Tohoku University
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