X-Ray Micrographic Study of Silicon Carbide Crystals

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概要

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• The traverse X-ray diffraction micrography is applied to studies on silicon carbide single crystals of 6H structure. Two kinds of dislocations of new types, having the Burgers vector in a <11^^-00> direction and in an average direction <33^^-02>, are found. The second kind of dislocation is often found in distorted regions of the crystals and sometimes created by chopping or neutron irradiation. Impurity layers which are proved to exist seem to be a cause of the lattice distortion. The mechanism of crystal growth is discussed in relation to the second kind of dislocation.

• 社団法人応用物理学会の論文
• 1965-09-15

著者

• Watanabe Tamaki

  Laboratory Of Atomic Energy For Education University Of Tokyo

• OHTA Kiyoshi

  Department of Physics, Saitama University

• TOMITA Takanori

  Department of Physics, Saitama University

• Ohta Kiyoshi

  Department Of Electronic Engineering Faculty Of Engineering Iwate University

• Tomita Takanori

  Department Of Physics Saitama University

関連論文

• X-Ray Micrographic Study of Silicon Carbide Crystals
• Polymorphism of the Silicon Carbide Crystal
• Silicon Carbide ^33
• The Crystal Structure of SiC 14H
• Preparation of Metallic W Film by H_2-Reduction of WO_3 Electron-Resist Film
• A Diffuse Reflexion from a Silicon Carbide Crystal
• X-Ray Study of Dislocations in SiC Crystals
• The Crystal Structure of SiC 39H

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