p-Type Characteristics of Cu-Doped CdS Thin Films
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概要
- 論文の詳細を見る
The characteristics of Cu-doped CdS films have been studied. Cu was easily diffused into CdS films when CdS was deposited on a Cu film successively at 2OO℃. The resistivity of the films increased initially with increasing Cu doping, but decreased for values of the Cu/Cd atomic ratio over about 0.5%. The Seebeck coefficient changed from negative to positive, and the Hall coefficient also changed from negative to positive with increasing Cu doping. I-V characteristics of a cell with a CdS(Cu-doped)/CdS(non-doped) film structure showed rectification. Thus, Cu-doped CdS films show p-type characteristics. It is proposed that the Cu compensates the donor due to S-vacancies, and the conductivity type of the CdS films was converted to p-type.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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KASHIWABA Yasube
Department of Electronic Engineering, Faculty of Engineering, Iwate University
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Kashiwaba Yasube
Department Of Electrical And Electronic Engineering Faculty Of Engineering Iwate University
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Kashiwaba Yasube
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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KANN0 Itaru
Department of Electronic Engineering, Faculty of Engineering, Iwate University
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Kann0 Itaru
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Of Chemistry Faculty Of Science Shizuoka University
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Ikeda Toshio
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Electronic Engineering Faculty Of Engineering Tohoku University
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