Memory Switching in Amorphous Cd-Sb Films
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概要
- 論文の詳細を見る
Amorphous Cd-Sb films with a Cd content of about 20% can be switched from a high-resistance state to a low-resistance state by the application of a dc or pulsed bias. Microanalysis of the switched region and observation of the growth of the dendritic filament from the negative electrode suggest that the migration of Cd ions is responsible for forming a conducting channel in the memory switching. The mechanism of the memory switching is explained as follows. First, a Cd speckle appears at the negative electrode, and then Cd dendrite develops from it. When the Cd dendrite just bridges both electrodes, a large current flows and the thermal effect extends to the surrounding region, creating a channel.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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Kawamura Yutaka
Department Of Cardiology Ageo Central General Hospital
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Kawamura Yutaka
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Kashiwaba Yasube
Department Of Electrical And Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Of Hypertension And Cardiorenal Medicine Dokkyo Medical University
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Ikeda Toshio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ikeda Toshio
Department Electronic Engineering Faculty Of Engineering Tohoku University
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