Selective Masking Effects of WO_3 Resist on Impurity Diffusion and Oxidation in Silicon
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概要
- 論文の詳細を見る
Selective masking effects of a WO_3 electron resist on phosphorus diffusion and oxidation in silicon at 1000℃ are described. Though the diffusion coefficient of phosphorus in the WO_3 layer is about twice as large as that in the SiO_2 layer, the WO_3 resist is useful as a masking film for phosphorus diffusion at elevated temperatures around 1000℃. On the other hand, the masking effect of the WO_3 layer on the oxidation of a silicon substrate is insufficient, since the diffusion coefficient of O_2 molecules in the WO_3 layer is about eight times as large as that in the SiO_2 layer.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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BABA Mamoru
Department of Quantum Science and Energy Engineering, Tohoku University
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Baba Mamoru
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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IKEDA TOSHIO
Department of Nephrology, Kantou-Teishin Hospital
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Baba Mamoru
Department Of Electrical And Electronic Engineering Iwate University
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Abe Susumu
Department Of Electronic Engineering Faculty Of Engineering Iwate University
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Ikeda Toshio
Department Of Hypertension And Cardiorenal Medicine Dokkyo Medical University
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Ikeda Toshio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ikeda Toshio
Department Electronic Engineering Faculty Of Engineering Tohoku University
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