Valence Band Electronic State of Transition-Metal Silicide TiSi_2 Studied by Soft X-Ray Emission Spectroscopy (SXES)

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概要

• 論文の詳細を見る

• A soft X-ray emission spectrum (SXES) due to a transition from the valence band to an electron excited Si-L_<2,3> level for TiSi_2, a transition metal silicide, has shown a clear sharp peak at hν, photon energy, 〜98 eV. From the SXES study, it is concluded that a fair amount of the Si s-like electronic state is included in the upper half, especially at the Fermi edge, of the valence band density of state (VB-DOS) of TiSi_2. This fact is in clear contrast to dominant proposals given so far, where it is claimed that the upper part of the VB-DOS of TMSi's is constructed only by electronic states due to transition metal(d)-Si(p) hybridization.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• 中村 裕之

  Graduate School Of Material Science University Of Hyogo

• Nakamura H

  Institute For Protein Research Osaka University

• Kusaka M

  Research Laboratory For Surface Science Faculty Of Science Okayama University

• Hirai Masaaki

  Research Laboratory For Surface Science Faculty Of Science Okayama University

• IWAMI Motohiro

  Research Laboratory for Surface Science, Faculty of Science, Okayama University

• KUSAKA Masahiko

  Research Laboratory for Surface Science, Faculty of Science, Okayama University

• NAKAMURA Hatsuo

  Osaka Electro-Communication University

• Kawai M

  Surface Chemistry Laboratory

• Iwami Motohiro

  Reseach Laboratory For Surface Science Faculty Of Science Okayama University

• Iwami M

  Department Of Physics Faculty Of Science Hiroshima University

• Kusaka Masahiko

  Research Laboratory For Surface Science Faculty Of Science Okayama University

• Iwami M

  Research Laboratory For Surface Science Faculty Of Science Okayama University

• ZHOU Nansheng

  Research Laboratory for Surface Science, Faculty of Science, Okayama University

• Zhou Nansheng

  Research Laboratory For Surface Science Faculty Of Science Okayama University:(permanent Address)mic

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