対向ターゲット式スパッタ法によるMgO単結晶基板上へのNi-Fe/Mn-Ni積層膜のエピタキシャル成長

概要

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Ni-Fe/Mn-Ni bilayers were fabricated at room temperature on MgO{100}and MgO{110}single-crystal substrates by the facing-targets dc sputtering method. The Ni-Fe layer was deposited by applying a bias voltage. After the deposition of the Ni-Fe layer, an Mn-Ni layer was deposited on the Ni-Fe layer. The Ni-Fe and γ-Mn-Ni layers were grown by epitaxy and highly oriented in their crystal axes in the film plane. In the case of the MgO{100}substrate, the preferred orientations of Ni-Fe and γ-Mn-Ni were (001) , and the directions of Ni-Fe[100]and γ-Mn-Ni[100]were parallel to MgO[100]. The crystal structure of γ-Mn-Ni was fct, and c/a decreased from 1. 01 to 0.984 when the Mn-Ni layer thickness increased from 200 to 1000 @90. In the case of the MgO{110}substrate, the preferred orientations of Ni-Fe and γ-Mn-Ni were(110) , and the directions of Ni-Fe[001] and γ-Mn-Ni[001]were parallel to the direction of MgO[001]. The crystal structure of γ-Mn-Ni was fct (c/a=0.978) .
社団法人日本磁気学会の論文
2000-04-15