スパッタリング法によるMnSbエピタキシャル膜の作製 : Si基板上に作製したMnSb薄膜の配向制御

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Ferromagnetic MnSb films were fabricated on Si(001), (110), and (111) single-crystal substrates by facing-targets sputtering at various substrate temperatures T_s(R.T. to 400 ℃). As a result. Epitaxial growth of MnSb was realized at a relatively low substrate temperature of T_S=200℃.The crystal orientation between the MnSb and the Si substrate was found to be as follows:(a) MnSb(001)//Si(111).MnSb[210]//Si[112], (b) MnSb(100)//Si(110), MnSb[001]//Si[001], and (c) MnSb(101)//Si(001), MnSb[010]//Si<110>. The value of the surface roughness R_a for an MnSb epitaxial film(3000A, T_s=200 C) is about 80Å. Accordinf to the torque measurement, the easy axis and haed axis of magnetization for MnSb are[010]and[001], respectively. The value of the uniaxial magnetocrystalline anisotropy K_u is -4x10^6 erg/cm^3. The easy axis and hard axis of magnetization in the (001) plane of MnSb were found to be [210] and [100], respectively.The value of K_3 is about 10^3 erg/cm^3.
社団法人日本磁気学会の論文
1998-04-15