プレーナ配置式スパッタリング法によるMnSbエピタキシャル薄膜の作製 : エピタキシャル成長に及ぼす基板温度ならびに基板バイアスの効果

概要

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Ferromagnetic MnSb films were fabricated on Si(100) and (111) single crystal substrates by dc planar sputtering. The effects of the substrate temperature and bias on the epitaxial growth are discussed. The main findings are as follows: (a) MnSb grains grown at T_<sub.> < 170℃ were (110) oriented irrespective of the crystal planes of the Si substrates; (b) MnSb grains with (101), (102), and (001) orientations existed in films prepared at T_<sub.> > 170℃ on Si(100) substrate; (c) MnSb grains epitaxially grown on Si(111) substrate were (101)-oriented at T_<sub.> = 200℃ and (001)-oriented at T_<sub.> = 250℃; (d) in the sputtering method used, the substrate voltage changed from 0 to -200 V, corresponding to a change in the ion assist energy from 0 to 40 eV/atom; and (e) the use of an ion assist of 15 eV/atom to Si(111) substrate decreased the epitaxial growth temperature of MnSb(001)-oriented grains from 250℃ to 200℃.
社団法人日本磁気学会の論文
2000-04-15