輸送現象と表面反応を考慮した SiHCl_3-H_2 系 Si エピタキシャル成長の三次元数値解析

概要

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The growth rate of Si epitaxial thin-film is studied for a horizontal single-wafer reactor using the transport and epitaxy model. The three-dimensional governing equations for gas velocity, temperature and chemical species transport are solved for a SiHCl_3-H_2 System. The growth rates, the thickness profile and the thickness variations in the transport-limited region calulated for a growth temperature of 1398 K agree quantiatively with the measured results. The non-linear dependence of the growth rate on SiHCl_3 concentration at the inlet of the reactor is also reproduced by the present calculations. It is concluded that the transport and epitaxy model can describe the silicon epitaxial growth on a rotating substrate over wide range of the reactant concentration.
日本結晶成長学会の論文
1996-03-25