イオン・プレーティング法により形成した SiO_2/Cu/TiN 積層膜の X 線的評価

概要

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Residual stress in a coating film is influenced by an undercoated layer in a multi-layered film system. The present study investigates residual stress as well as crystal texture in two-and three-layered films, i.e., Cu/TiN film, SiO_2/Cu film and SiO_2/Cu/TiN film deposited on glass substrates. TiN film was first deposited by arc ion plating on the substrate as an undercoated layer and then Cu and SiO_2 films were deposited on it by plasma coating. The crystal structure and the residual stress in the deposited multi-layered film were investigated by atomic force microscope (AFM) and X-ray diffraction as a function of film thickness of TiN layer. It was found that the SiO_2 film was amorphous and both the Cu film and the TiN film had a strong {111} orientation. The two-exposure method was used to evaluate residual stress in the Cu and the TiN films by measuring lattice strains in two directions determined by crystal orientation. The Cu layer in Cu/TiN film had tensile residual stresses of 180∿240MPa, and the Cu layer in SiO_2/Cu/TiN film had slightly larger tensile residual stresses of 210∿260MPa. These stresses in both films increased with the film thickness of the undercoated TiN layer. The TiN layer of Cu/TiN and SiO_2/Cu/TiN had also tensile residual stress of 300 and 330MPa, respectively.
社団法人日本材料学会の論文
2003-10-15