Scattering Mechanisms in Heavily Doped Semiconductors. II. Effect of Mass Anisotropy and Multiple Scattering
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概要
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Resistivities and Hall coefficierats of unstressed and unjaxially saturation-stressed samples of heavily aratimony-doped germanium in the metallic concentra-tion range are investigated by the degenerate electron gas model with impurityscattering. The effect of anisotropic effective mass is investigated, firstly by thevariational method, and secondly by solving the Boltzmanra eq!atior? directly in anumerical method. The anisotropy of screened impurity potential is fully takeninto account withita the liuaear screening theory. The effect of finite electron lifetime is studied by a simplified coherent potential app?'oximation. By these effects,iua addition to the effect of the nonliraear screening and many-body interact:ioniutvestigated in the authors' previous paper, the agreerrtent with experimerats on theunstressed samples is much improved and a good ag;reement is obtained on thesaturation-stressed samples.
- 社団法人日本物理学会の論文
- 1980-08-15
著者
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Kasuya Tadao
Department Of Physics Faculty Of Science Tohoku University
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Saso Tetsuro
Department Of Physics Faculty Of Science Saitama University
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Saso Tetsuro
Department Of Physics Faculty Of Science Tohoku University
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