Low Energy Electronic State and Optical Phonon In YbB_6

概要

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Reflectivity spectrum of YbB. was measured in the energy region between 1 meVand 40 eV at 9 K and 300 K. Observed optical absorption structures in the energyregion from 1 meV to 1 eV were decomposed into three parts. The first is a Drudepart. The effectuve C0I1dUCt10I1 electron nutnber WIS evaluated [0 be about O.9% pCYmole with weak temperature dependence. The second part consists of a weak absorp-tion due to impurity centered 0.2 eV and strong interband transition between valenceand conduction bands with the energy gap of about 0.5 eV. The last one is due tophonon absorption bands. By comparing with the theoretical phonon dispersioncurve calculated by Takegahara et at., the absorption at about 13 meV was identifiedto be a 7'..,-mode due to the relative motion of Yb and B, and the absorption at about108 meV to a 7'..-mode due to an intra-molecular vibration of B..YbB, optical property, reflectivity, optical phonon, energy gap
社団法人日本物理学会の論文
1992-01-15