Optical and Photoelectrical Studies of Electronic Structure of R_3Au_3Sb_4 (R=La, Ce and Pr)

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The electronic structures of a magnetic semiconductor Ce_3Au_3Sb_4 and the related materials, La_3Au_3Sb_4 and Pr_3Au_3Sb_4, have been investigated by reflectivity and resonant photoemission spectra. From the resonant photoemission spectra of Ce_3Au_3Sb_4, the hybridization between the Ce_4f state and the Sb5p valence band was found to be weak. This result is consistent with the electronic structure which is derived from the analysis of the optical data about the energy gap. The experimentally determined electronic structure is compared with a band calculation of La_3Au_3Sb_4. The unoccupied 4f state is concluded to be about 3 eV above the Fermi level, which is higher by 2 eV than the result of the band calculation. The exciton like absorption due to the transition from 4f to 5d states was observed. The intra-atomic Coulomb interaction between 4f and 5d states is thought to play an important role.
社団法人日本物理学会の論文
1995-11-15