Scattering Mechanism in Heavily Doped Semiconductors. I. Maxima in Resistivity and Hall Coefficient
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概要
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Resistivities and Hall coefficients of heavily doped semiconductors in themetallic concentration range, especially of Sb-5[oped Go and P7doped Si, areinvestigated by the degenerate electron gas model with impurity scattering.The maxima of resistivity and Hall coefficient are ?sxplained by strong temperaturevariation of tlae screening length, which is due to the smallness of the Fermitemperature 7'F in the present systems (IFNIOO K). The shapes of the screenedimpurity potentials and the scattering of electrons lby them are investigated i n detailby the nonlinear Ilartree approximation, the Kohn-Sham density functionalformalism and the randqm phase approximation with valley multiplicity. Includingnonlinearity of screening and many-body effect, wre obtain the values of resistmvmtywhich agree very well with experiments for the lxigher concentratuon samples ofthe metallic range.
- 社団法人日本物理学会の論文
- 1980-05-15
著者
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Kasuya Tadao
Department Of Physics Faculty Of Science Tohoku University
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Saso Tetsuro
Department Of Physics Faculty Of Science Saitama University
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Kasuya Tadao
Department Of Physics Faculty Of Science University Of Tohoku:max-planck-institut Fur Festkorperfors
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Saso Tetsuro
Department Of Physics Faculty Of Science University Of Tohoku
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