Pressure Effect on LaSb and CeAs
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概要
- 論文の詳細を見る
Pressure effects on the electronic states in LaSb and CeAs are studied in detail based on high-pressure dHvA measurement. In LaSb, it was shown that even for small carriers, the Fermi surfaces do not change uniformly because of a strong k-dependent p-d mixing effect on the conduction band and strong deviation from k^2-dispersion of the hole band. Strong anisotropy found in c_<11> acoustic dHvA was attributed to the above mechanism. A magnetic polaron lattice, inserted in the 4fΓ_7 ground state, is able to explain unusual properties in CeAs, as well as in CeP.
- 社団法人日本物理学会の論文
- 1993-02-15
著者
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糟谷 忠雄
東北大理
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SAKAI Osamu
Department of Physics, Tokyo Metropolitan University
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糟谷 忠雄
東北大学理学部
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KASUYA Tadao
Department of Physics,Faculty of Science,Tohoku University
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Kasuya Tadao
Department Of Physics Faculty Of Science Tohoku University
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KANETA Yasunori
Department of Quantum, Engineering and Systems Science, The University of Tokyo
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Kaneta Yasunori
Department Of Quantum Engineering And Systems Science The University Of Tokyo
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Kaneta Yasunori
Department Of Physics Tohoku University
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Sakai Osamu
Department Of Electronic Science And Engineering Kyoto University
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Kaneta Y
Department Of Quantum Engineering And Systems Science The University Of Tokyo
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Sakai Osamu
Department Of Cardiovascular Surgery Kyoto Prefectural University Of Medicine
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