The Electronic Structure of a D^- Centre in Many-Valley Semiconductors
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概要
- 論文の詳細を見る
The binding energies of a D ion in the stress free and high stress cases are calculatedwuth use of the Chandrasekhar type variational function. In the approximation ofneglecting the valley-orbit interaction, the ionization energy of an electron from a Dground state to a conduction band in the intravalley electron configuration correspondsto the D binding energy in the high stress case while that in the intervalleyconfiguration to the binding energy in the stress free case. In the former case thecalculated value is the half of the observed one while in the latter case the calculatedvalue is in fair agreement with the observed one. The energy difference between twocases is mainly due to the difference between the intra-and inter-valley Coulombinteractions.
- 社団法人日本物理学会の論文
- 1977-10-15
著者
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Kamimura Hiroshi
Department Of Electronic Engineering Gunma University
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Natori Akiko
Department Of Electronic Engineering The University Of Electro-communications
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Kamimura Hiroshi
Department Of Applied Physics . Faculty Of Science Tokyo University Of Science
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