Dielectric Properties of the Interface between Si and SiO2
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概要
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We studied the electronic structure and dielectric properties of a SiO2(quartz)–($\bar{1}100$)/Si(001) interface, using first-principles ground-state calculations in a finite electric field. We evaluated the optical and the static dielectric constants for the stable SiO2/Si(001) interface model. Both the optical and the static dielectric constants change abruptly in the vicinity of the SiO2/Si interface, while the energy gap changes gradually on the SiO2 side. These results indicate that the profile of the dielectric constant is determined by the local polarization which directly reflects the local atomic arrangement.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-30
著者
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Natori Akiko
Department Of Electronic Engineering The University Of Electro-communications
-
Nakamura Jun
Department Of Environmental Sciences And Engineering University Of North Carolina
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Wakui Sadakazu
Department of Electronic-Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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