Electron Correlation Effect in Impurity Doped Semiconductors

概要

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l'he electron coz"relation effect in impurity doped semiconductors is investigatedwith use of alloy type model Hamiltonian. The formation of localized momentand the consequent structures on the density of states corresponding to theimpurity band, D band and host conduction band is studied in the Hartree-Fock approximation and coherent potential approximation. It is shown that theelectron correlation effect is emphasized on impurity sites and the metal-insulatortransition occurs at the critical impurity concentration induced by the formation oflocalized moment. Further the effect of valley degeneracy in the case of manyvalley semiconductors is examined and pointed out to be important on the mannerof formation of localized moment in concentrations near the metal-insulatortransition.
社団法人日本物理学会の論文
1982-09-15