Effect of Lattice Anharmonicity on Displacive Phase Transistion in Narrow-Gap Semiconductors
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概要
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In a previous paper, the displacive phase transition in narrow-gap semiconductors was investigeted in terms of electron-phonon coupled Hamiltonian in the mean-field approximation. In this paper the effect of the lattice anharmonicity on the previous system is examined in the mean-field approximation. In SnTe, the lattice angarmonicity is considered to be the main origin of the temperature dependence of the soft mode frequency. The dependence of the critical temperature on the carrier conentration is calculated with a simple model.
- 社団法人日本物理学会の論文
- 1976-09-15
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